Ma Ning

Title: The Innovative Contributions of Ma Ning

Introduction

Ma Ning is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents

Ma Ning holds a patent for a method titled "Method for BEOL metal to dielectric adhesion." This innovative method promotes adhesion between a dielectric layer of a semiconductor device and a metal fill deposited within a trench in the dielectric layer. The process involves performing an ion implantation process, where an ion beam formed of an ionized dopant species is directed into the trench at an acute angle relative to the top surface of the dielectric layer. This technique forms an implantation layer in the sidewall of the trench, allowing the metal fill to adhere effectively to the sidewall.

Career Highlights

Ma Ning is currently employed at Applied Materials, Inc., a leading company in the semiconductor industry. His expertise and innovative approaches have contributed to advancements in semiconductor manufacturing processes.

Collaborations

Ma Ning has collaborated with notable colleagues, including Qintao Zhang and Jun-Feng Lu. Their teamwork has fostered a productive environment for innovation and development in their field.

Conclusion

Ma Ning's contributions to semiconductor technology, particularly through his patented methods, highlight his role as an influential inventor. His work continues to impact the industry positively.