So. Burlington, VT, United States of America

Lyndon S Gibbs


Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2002

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1 patent (USPTO):

Title: The Innovations of Lyndon S. Gibbs

Introduction

Lyndon S. Gibbs, based in South Burlington, Vermont, is noted for his contributions to the field of photolithography through innovative methods in developing copolymer photosensitive resists. His work has implications for advancing the technology used in various electronic devices and systems.

Latest Patents

Lyndon holds a significant patent titled "Single Component Developer for Use with Ghost Exposure." This groundbreaking method introduces a process for developing copolymer photosensitive resists using a single solvent in conjunction with a puddle develop tool. The copolymer resist employed in this invention is ZEP 7000, while the developer utilized is ethyl 3-ethoxy propionate (EEP). This invention enhances the efficiency and effectiveness of the photolithography process in the semiconductor industry.

Career Highlights

Gibbs is associated with the International Business Machines Corporation (IBM), a leading company in technology and innovation. His role at IBM has allowed him to work on cutting-edge research and development projects, fostering advancements in various electronic technologies. His patent demonstrates his expertise and dedication to improving processes within the industry.

Collaborations

Throughout his career, Lyndon has collaborated with talented colleagues, including Thomas Benjamin Faure and Steven D. Flanders. These collaborations have further enriched the innovative environment at IBM, allowing them to share insights and expertise that contribute to the ongoing advancement of technology.

Conclusion

Lyndon S. Gibbs’s contributions to innovation through his patent and collaborative efforts at IBM highlight the importance of creativity and technical expertise in the field of technology. His work not only reflects his dedication as an inventor but also serves as a foundation for future advancements in photolithography and materials science.

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