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For the Inventor, By the Inventor

Perrysburg, OH, United States of America

Long Cheng

This inventor holds 4 USPTO granted patents and 7 published patent applications. Top assignee: First Solar, Inc.. Active years: 2014-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Long Cheng. Retrieved from https://idiyas.com/inventor/long-cheng-ck756bza

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4 

% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:

goldMedal4 out of 300 
 
First Solar, Inc.
 patents

Years Active: 2014-2016

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4 patents (USPTO):Explore Patents
1. 9269850 - Method and apparatus for forming copper(Cu) or antimony(Sb) doped zinc telluride and cadmium zinc telluride layers in a photovoltaic device (2016-02-23),
2. 8987587 - Metal barrier-doped metal contact layer (2015-03-24),
3. 8926761 - Photovoltaic module cleaner (2015-01-06),
4. 8766088 - Dopant-containing contact material (2014-07-01),

Title: Long Cheng: Innovator in Photovoltaic Technology

Introduction

Long Cheng is a notable inventor based in Perrysburg, OH (US), recognized for his contributions to photovoltaic technology. With a total of four patents to his name, Cheng has made significant advancements in the field of solar energy.

Latest Patents

One of Cheng's latest patents is titled "Method and apparatus for forming copper (Cu) or antimony (Sb) doped zinc telluride and cadmium zinc telluride layers in a photovoltaic device." This invention describes a method and apparatus for incorporating Cu or Sb dopants into a zinc-based layer during its formation. The layer is created over a coated substrate using an electrochemical deposition (ECD) process, where the bias voltage and plating solution composition can be systematically altered to control the amount of dopant incorporated into the plated layer. Another significant patent is for a "Metal barrier-doped metal contact layer," which outlines a photovoltaic device that includes an intrinsic metal layer adjacent to a semiconductor absorber layer, along with a doped metal contact layer that contains a metal base material and a dopant.

Career Highlights

Long Cheng is currently employed at First Solar, Inc., a leading company in the solar energy sector. His work focuses on enhancing the efficiency and effectiveness of photovoltaic devices, contributing to the advancement of renewable energy technologies.

Collaborations

Cheng collaborates with esteemed colleagues such as Akhlesh Gupta and Anke Abken, who share his commitment to innovation in solar technology.

Conclusion

Long Cheng's work in photovoltaic technology exemplifies the spirit of innovation in the renewable energy sector. His patents and contributions are paving the way for more efficient solar energy solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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