Company Filing History:
Years Active: 2014-2016
Title: Long Cheng: Innovator in Photovoltaic Technology
Introduction
Long Cheng is a notable inventor based in Perrysburg, OH (US), recognized for his contributions to photovoltaic technology. With a total of four patents to his name, Cheng has made significant advancements in the field of solar energy.
Latest Patents
One of Cheng's latest patents is titled "Method and apparatus for forming copper (Cu) or antimony (Sb) doped zinc telluride and cadmium zinc telluride layers in a photovoltaic device." This invention describes a method and apparatus for incorporating Cu or Sb dopants into a zinc-based layer during its formation. The layer is created over a coated substrate using an electrochemical deposition (ECD) process, where the bias voltage and plating solution composition can be systematically altered to control the amount of dopant incorporated into the plated layer. Another significant patent is for a "Metal barrier-doped metal contact layer," which outlines a photovoltaic device that includes an intrinsic metal layer adjacent to a semiconductor absorber layer, along with a doped metal contact layer that contains a metal base material and a dopant.
Career Highlights
Long Cheng is currently employed at First Solar, Inc., a leading company in the solar energy sector. His work focuses on enhancing the efficiency and effectiveness of photovoltaic devices, contributing to the advancement of renewable energy technologies.
Collaborations
Cheng collaborates with esteemed colleagues such as Akhlesh Gupta and Anke Abken, who share his commitment to innovation in solar technology.
Conclusion
Long Cheng's work in photovoltaic technology exemplifies the spirit of innovation in the renewable energy sector. His patents and contributions are paving the way for more efficient solar energy solutions.