Jiangsu, China

Lizhi Tang


Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2021

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1 patent (USPTO):

Title: The Innovative Contributions of Lizhi Tang

Introduction

Lizhi Tang is a prominent inventor based in Jiangsu, China. He has made significant strides in the field of semiconductor technology, particularly with his innovative work on graphene channel silicon carbide power semiconductor transistors. His contributions are paving the way for advancements in electronic devices.

Latest Patents

Lizhi Tang holds a patent for a groundbreaking invention titled "Graphene channel silicon carbide power semiconductor transistor." This invention provides a unique cellular structure where a graphene strip serves as a channel embedded in the surface of the P-type body region. The design allows for enhanced performance by maintaining a consistent on-resistance and current transmission capacity while reducing overall off-state leakage current and improving breakdown voltage.

Career Highlights

Lizhi Tang is affiliated with Southeast University, where he continues to contribute to research and development in semiconductor technology. His work is characterized by a focus on integrating advanced materials like graphene into traditional semiconductor structures, which has the potential to revolutionize power electronics.

Collaborations

Lizhi Tang has collaborated with notable colleagues, including Weifeng Sun and Siyang Liu. Their joint efforts in research and development have further advanced the field of semiconductor technology.

Conclusion

Lizhi Tang's innovative work in graphene channel silicon carbide power semiconductor transistors exemplifies the potential of modern materials in enhancing electronic devices. His contributions are significant in the ongoing evolution of semiconductor technology.

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