Company Filing History:
Years Active: 2013
Title: Innovations of Ling Pu in Non-Volatile Flash Memory Technology
Introduction
Ling Pu, an inventive mind based in Jiangsu, China, has made significant contributions to the field of non-volatile flash memory devices. With a strong focus on enhancing memory storage technology, Ling has a patent that showcases a novel approach to operating high-density multi-level cell (MLC) memory devices.
Latest Patents
Ling Pu holds a patent for a "Method for operating a high density multi-level cell non-volatile flash memory device." This innovative method involves several critical steps to improve the performance and efficiency of multi-level memory cells. It starts with the provision of a localized trapping memory cell with an initial threshold voltage of approximately 2.5V. The method incorporates an erasing operation that yields a negative threshold level with a uniform charge distribution across the channel region. Notably, it addresses the over-erasure issues during the erasing operation by executing a programming process that meticulously adjusts the threshold voltage to between -2V and -1V. Following this adjustment, electrons are locally injected into the storage layer, allowing for precise control over the quantity of injected electrons, ultimately achieving effective MLC storage.
Career Highlights
Ling Pu is associated with Nanjing University, where he engages in advanced research to push the boundaries of memory technology. His innovative ideas have led to advancements that could potentially reshape how data storage is managed in various applications, aligning with the increasing demand for high-density memory solutions.
Collaborations
Throughout his career, Ling has collaborated with esteemed colleagues, including Yue Xu and Feng Yan. These partnerships highlight the commitment to collective improvements in technology and the exchange of innovative ideas that lead to groundbreaking developments in the field of non-volatile memory.
Conclusion
Ling Pu's work in high-density multi-level cell non-volatile flash memory stands as a testament to his innovative spirit and dedication to advancing technology. His patented method not only showcases his expertise but also sets a foundation for future developments in memory devices. As memory technology continues to evolve, Ling's contributions will undoubtedly influence the next generation of data storage solutions.