Limin Zhou

Title: Limin Zhou: Innovator in Semiconductor Technology

Introduction

Limin Zhou is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor structure and manufacturing method.

Latest Patents

Limin Zhou holds a patent for a semiconductor structure and method of manufacturing the same. This invention provides a semiconductor structure that includes a substrate and a gate formed on the substrate. The manufacturing method involves several steps, including providing a substrate, forming a trench in the substrate, and depositing a gate layer. The gate layer consists of two step portions that extend from the outside of the trench to the inside. The method allows for the formation of a gate with a small critical dimension, which meets the stringent requirements for gate size in modern semiconductor applications. He has 1 patent to his name.

Career Highlights

Limin Zhou is associated with Shanghai Huali Microelectronics Corporation, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices.

Collaborations

He collaborates with notable colleagues, including Fulong Qiao and Xiao Yang, who contribute to the innovative environment at Shanghai Huali Microelectronics Corporation.

Conclusion

Limin Zhou's contributions to semiconductor technology exemplify the spirit of innovation in the field. His patent reflects a commitment to meeting the evolving demands of the industry.