Company Filing History:
Years Active: 2020
Title: Li-Te Lin: Innovator in Semiconductor Technology
Introduction
Li-Te Lin is a talented inventor based in Hsinchu, Taiwan. She has made significant contributions to the field of semiconductor technology. Although she currently holds no granted patents, her innovative ideas are reflected in her latest patent applications.
Latest Patent Applications
Li-Te Lin's recent patent applications include:
1. **METHOD FOR FORMING A SEMICONDUCTOR DEVICE AND DEVICES FABRICATED THEREOF** - This application describes a protective layer deposited over bottom structures to safeguard them during the fabrication of upper structures. The protective layer aims to prevent STI loss and bottom spacer loss during the source/drain etch back process. It also enhances process uniformity by eliminating process loading or non-uniformity in STI loss, fin sidewall spacer height, and recess profiles. Additionally, the protective layer slows down the fin sidewall spacer etching rate during semiconductor fin etch back, thereby improving source/drain regions profile control.
2. **Dry Etching Of Semiconductor Structures With Fluorine-Containing Gases** - This application outlines a method that includes forming a fin structure with a stacked fin portion on a substrate. The stacked fin portion consists of a first semiconductor layer and a second semiconductor layer, with the latter containing germanium. The method further involves etching the fin structure to create an opening and etching a portion of the second semiconductor layer with a fluorine-containing gas through the opening.
Conclusion
Li-Te Lin is an innovative inventor whose work in semiconductor technology shows great promise. Her latest patent applications reflect her commitment to advancing the field.