Location History:
- Yunlin County, TW (2019)
- Hefei, CN (2020)
Company Filing History:
Years Active: 2019-2020
Title: The Innovations of Li-Chun Huang
Introduction
Li-Chun Huang is a prominent inventor based in Hefei, China. He has made significant contributions to the field of data storage technology. With a total of 2 patents to his name, Huang's work focuses on enhancing the efficiency and functionality of memory devices.
Latest Patents
Huang's latest patents include a "Data storage device and operation method of the same." This invention discloses an apparatus and a method for accessing a plurality of memory blocks. The apparatus comprises a memory circuit configured to store a recording table, which corresponds to the quality index of the memory blocks. Additionally, a control circuit groups the memory blocks into a first and second memory group based on their quality index, enabling access to the first group while disabling access to the second. Another notable patent is the "Memory device, memory controller, and control method thereof." This control method involves detecting an operational command to a first memory unit, interrupting the operational status of a second memory unit, and recovering the operational status of the second memory unit after asserting the command.
Career Highlights
Li-Chun Huang has worked with notable companies such as Raymx Microelectronics Corporation and Realtek Semiconductor Inc. His experience in these organizations has contributed to his expertise in memory technology and innovation.
Collaborations
Huang has collaborated with several talented individuals in his field, including Yen-Chung Chen and Chih-Ching Chien. These collaborations have likely fostered a creative environment that encourages innovation and the development of new technologies.
Conclusion
Li-Chun Huang's contributions to data storage technology through his patents and career experiences highlight his role as an influential inventor. His work continues to impact the field, paving the way for future advancements in memory devices.