Grenoble, France

Laurent Ranno


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 18(Granted Patents)


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: The Innovative Mind of Laurent Ranno

Introduction

Laurent Ranno is a notable inventor based in Grenoble, France. He has made significant contributions to the field of magnetic memory technology. His work focuses on enhancing the efficiency and functionality of magnetic memory systems.

Latest Patents

Laurent Ranno holds a patent for a groundbreaking invention titled "Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys." This invention involves a magnetic memory system where each memory point consists of a magnetic tunnel junction. The system includes a trapped layer with rigid magnetization and a free layer with invertible magnetization. An insulating layer is interposed between these two layers. The free layer is crafted from an amorphous or nanocrystallized alloy based on rare earth or transition metals, exhibiting ferromagnetic properties and a substantially planar magnetization.

Career Highlights

Laurent Ranno is affiliated with the Centre National de la Recherche Scientifique, a prestigious research institution in France. His work has contributed to advancements in magnetic memory technologies, which are crucial for data storage solutions.

Collaborations

Laurent has collaborated with esteemed colleagues such as Jean-Pierre Nozieres and Yann Conraux. Their combined expertise has furthered research in the field of magnetic memory.

Conclusion

Laurent Ranno's innovative contributions to magnetic memory technology highlight his role as a leading inventor in this field. His patent reflects a significant advancement that could influence future developments in data storage.

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