Company Filing History:
Years Active: 1993
Title: Lau B Howe - Innovator in Integrated Circuit Bonding Technology.
Introduction
Lau B Howe is a notable inventor based in Subanq Java, Malaysia. He has made significant contributions to the field of integrated circuit technology, particularly in the area of bonding processes. His innovative approach has led to advancements that enhance the reliability and performance of electronic devices.
Latest Patents
Lau B Howe holds a patent for a process titled "Process for enhanced intermetallic growth in IC interconnections." This invention involves an apparatus and method for bonding wire to the bond sites of integrated circuits. The patent describes a high-frequency ultrasonic energy source designed to optimize the bonding process, particularly for aluminum alloy bond pads. The ultrasonic energy is applied at approximately 114 kHz, resulting in superior bond strength and processing flexibility.
Career Highlights
Lau B Howe is associated with Texas Instruments Corporation, where he has contributed to the development of advanced bonding techniques. His work has focused on improving the shear strength and reliability of bonds in integrated circuits, addressing challenges faced in the prior art.
Collaborations
Throughout his career, Lau B Howe has collaborated with esteemed colleagues, including Rafael C Alfaro and Thomas H Ramsey. These collaborations have fostered innovation and have been instrumental in advancing the technology in the field of integrated circuits.
Conclusion
Lau B Howe's contributions to integrated circuit bonding technology exemplify the impact of innovative thinking in electronics. His patented processes and methods continue to influence the industry, ensuring enhanced performance and reliability in electronic devices.