Laszlo Dozsa

Title: Laszlo Dozsa: Innovator in Semiconductor Research

Introduction

Laszlo Dozsa, an accomplished inventor based in Erd, Hungary, has made significant contributions to the field of semiconductor research. With a singular patent to his name, his work demonstrates a profound understanding of the complexities involved in determining charged energy states in semiconductor materials.

Latest Patents

Laszlo Dozsa holds a patent titled "Method for determining charged energy states of semiconductor." This innovative method utilizes deep level transient spectroscopy to explore charged energy states in semiconductor or insulator materials. The technique involves exciting the sample with periodic exciting pulses, detecting its transient response as it returns to thermodynamic balance, and implementing a sophisticated detection and weighting procedure that enhances the accuracy of the results.

Career Highlights

Dozsa is affiliated with the Hungarian Academy of Sciences, at the Institute for Technical Physics. His career is marked by a commitment to advancing semiconductor technologies. His unique patent showcases his ability to operate at the cutting edge of scientific research, making substantial contributions to the field.

Collaborations

Throughout his professional journey, Laszlo Dozsa has collaborated with esteemed colleagues Gyorgy Ferenczi and Janos Boda. Together, they have fostered an environment conducive to innovation and exploration in semiconductor physics, furthering their collective impact on the research community.

Conclusion

Laszlo Dozsa exemplifies the spirit of innovation and dedication to scientific advancement. His patent represents a valuable contribution to the field of semiconductors, reinforcing the importance of collaboration in driving technological progress. As he continues to push boundaries, Dozsa’s work will undoubtedly inspire future generations of inventors and researchers.