Location History:
- Tbilisi, GA (US) (2002)
- Tbilisi, GE (2004)
Company Filing History:
Years Active: 2002-2004
Title: Larisa Koptonashvili: Innovator in Diode Device Manufacturing
Introduction
Larisa Koptonashvili is a prominent inventor based in Tbilisi, Georgia. She has made significant contributions to the field of electronics, particularly in the manufacturing of diode devices. With a total of 2 patents, her work showcases her innovative approach to technology.
Latest Patents
One of her latest patents is a method for making a diode device. This method involves the fabrication of a first electrode with a substantially flat surface. A sacrificial layer is placed over the surface of the first electrode, which comprises a first material. A second material, suitable for use as a second electrode, is then placed over the sacrificial layer. The sacrificial layer is removed using an etchant that chemically reacts with the first material. This process ensures that the region between the first and second electrodes has a gap of 50 nanometers or less, preferably 5 nanometers or less. Alternatively, the sacrificial layer can be removed by cooling the assembly with liquid nitrogen or by heating it to evaporate the sacrificial layer.
Career Highlights
Larisa currently works at Borealis Technical Limited, where she continues to develop her innovative ideas. Her expertise in diode device manufacturing has positioned her as a key player in her field.
Collaborations
She collaborates with talented coworkers, including Avto Tavkhelidze and Zauri Berishvili, who contribute to her projects and enhance the innovative environment at Borealis Technical Limited.
Conclusion
Larisa Koptonashvili is a remarkable inventor whose work in diode device manufacturing exemplifies her commitment to innovation. Her contributions are paving the way for advancements in electronics.