Company Filing History:
Years Active: 2015-2016
Title: Kyutae Na: Innovator in Semiconductor Technology
Introduction
Kyutae Na is a prominent inventor based in Malta, NY (US), known for his contributions to semiconductor technology. With a focus on improving device integration methods, he has made significant strides in the field.
Latest Patents
Kyutae Na holds 2 patents, with his latest innovations centered around shallow trench isolation integration methods. These patents detail approaches for forming semiconductor devices, particularly through the use of a 'buffer zone' or gap layer between through-silicon vias (TSVs) and transistors. This gap layer is filled with a low-stress thin film material that mitigates stress and crack formation in devices. Additionally, it maintains a spatial distance between TSVs and transistors, which is crucial for reducing the adverse effects of temperature excursions.
Career Highlights
Kyutae Na is currently employed at GlobalFoundries Inc., where he continues to advance semiconductor technology. His work has been instrumental in developing methods that enhance the reliability and performance of semiconductor devices.
Collaborations
Throughout his career, Kyutae has collaborated with notable colleagues, including Hongliang Shen and Sandeep Gaan. These partnerships have fostered innovation and contributed to the success of their projects.
Conclusion
Kyutae Na's work in semiconductor technology exemplifies the impact of innovative thinking in the industry. His patents and collaborations highlight his commitment to advancing technology and improving device performance.