Seoul, South Korea

Kyu-Hyun Chio


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 36(Granted Patents)


Company Filing History:


Years Active: 1992

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1 patent (USPTO):Explore Patents

Title: Kyu-Hyun Chio: Innovator in DRAM Technology

Introduction

Kyu-Hyun Chio is a prominent inventor based in Seoul, South Korea. He is known for his significant contributions to the field of semiconductor technology, particularly in dynamic random-access memory (DRAM) systems. His innovative approach has led to advancements that enhance the performance and efficiency of memory devices.

Latest Patents

Kyu-Hyun Chio holds a patent for a "Process for producing a stacked capacitor of a DRAM cell." This invention features a stacked capacitor with a fin-like structure, where multiple polysilicon layers that form the storage electrode are interconnected in a sawtooth-like manner. This design addresses the structural instability of the fin-like structure and allows for an increased capacitor capacity in highly integrated DRAM without expanding the area occupied by the capacitor.

Career Highlights

Chio is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His work at Samsung has positioned him at the forefront of semiconductor innovation, contributing to the development of advanced memory solutions that are critical for modern computing.

Collaborations

Some of Kyu-Hyun Chio's notable coworkers include Dong-Joo Bae and Won-Shik Baek. Their collaborative efforts in research and development have further propelled advancements in DRAM technology.

Conclusion

Kyu-Hyun Chio's innovative contributions to DRAM technology exemplify the impact of dedicated inventors in the semiconductor industry. His patent for a stacked capacitor demonstrates a significant step forward in enhancing memory device performance.

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