Kanagawa, Japan

Kyoko Umeda

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):

Title: Kyoko Umeda: Innovator in Semiconductor Technology

Introduction

Kyoko Umeda is a prominent inventor based in Kanagawa, Japan. She has made significant contributions to the field of semiconductor technology, particularly in the manufacturing processes that enhance device performance. Her innovative approach has led to the development of a patented method that is crucial for advancing semiconductor devices.

Latest Patents

Kyoko Umeda holds a patent for a "Method for manufacturing a semiconductor device." This invention focuses on improving the performance of semiconductor devices. The method involves forming a control gate electrode from a first conductive film over the main surface of a semiconductor substrate. An insulation film and a second conductive film are then applied to cover the control gate electrode, followed by an etching process that leaves the second conductive film over the sidewall of the control gate electrode via the insulation film, thus forming a memory gate electrode. Additionally, a p-type well is created in the peripheral circuit region, where a third conductive film is formed to establish a gate electrode.

Career Highlights

Kyoko Umeda is currently employed at Renesas Electronics Corporation, where she continues to work on innovative semiconductor technologies. Her expertise and dedication to her field have made her a valuable asset to her company and the industry as a whole.

Collaborations

Kyoko collaborates with talented colleagues, including Yoshiyuki Kawashima and Hiraku Chakihara. Their combined efforts contribute to the advancement of semiconductor technology and the successful implementation of innovative solutions.

Conclusion

Kyoko Umeda's contributions to semiconductor technology through her patented methods exemplify her role as a leading inventor in the field. Her work not only enhances device performance but also paves the way for future innovations in semiconductor manufacturing.

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