Kyeongjin Park

Title: Kyeongjin Park - Innovator in Vertical Memory Devices

Introduction

Kyeongjin Park is a notable inventor based in Yongin-si, South Korea. He has made significant contributions to the field of memory devices, particularly with his innovative designs that enhance performance and efficiency.

Latest Patents

Kyeongjin Park holds a patent for vertical memory devices. This invention includes a gate electrode structure, a channel, an insulation pattern structure, an etch stop structure, and a through via. The gate electrode structure features gate electrodes that are spaced apart on a substrate in a direction perpendicular to the upper surface. Each gate electrode extends parallel to the upper surface of the substrate. The channel runs through the gate electrode structure in the first direction. The insulation pattern structure also extends through the gate electrode structure. The etch stop structure surrounds a portion of the insulation pattern structure's sidewall and consists of a filling pattern and an etch stop pattern. The through via extends in the first direction through the insulation pattern structure.

Career Highlights

Kyeongjin Park is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of technology in memory devices. His work has been instrumental in advancing the capabilities of vertical memory technology.

Collaborations

He collaborates with talented coworkers, including Jaehoon Shin and Kangmin Kim, who contribute to the innovative environment at Samsung Electronics.

Conclusion

Kyeongjin Park's contributions to vertical memory devices exemplify his commitment to innovation in technology. His work not only enhances memory device performance but also sets a foundation for future advancements in the field.