Company Filing History:
Years Active: 2011
Title: Innovations by Kyeong-Joon Ahn in Atomic Layer Deposition Technology
Introduction: Kyeong-Joon Ahn, an inventor based in Gimpo-si, South Korea, has made significant contributions to the field of atomic layer deposition (ALD) through his innovative patent. His work focuses on enhancing deposition processes using advanced techniques that aim to improve material quality and efficiency.
Latest Patents: Kyeong-Joon Ahn holds a patent for an "Atomic layer deposition apparatus using neutral beam and method of depositing atomic layer using the same." This patent involves an apparatus that converts an ion beam into a neutral beam, which is then radiated onto a substrate to be treated. The patented method includes supplying a first reaction gas that cannot be chemisorbed onto the substrate, forming an initial reactant adsorption layer, and subsequently using a neutral beam with a second reaction gas to remove non-chemisorbed materials, facilitating the creation of a secondary reactant layer. This innovative approach minimizes damage caused by charging during the deposition process.
Career Highlights: Ahn's career has been highlighted by his role at Sungkyunkwan University, where he contributes to research and development in the field of nanotechnology and materials science. His work in ALD is particularly noteworthy for its potential applications in various industries, including semiconductor manufacturing and nanotechnology.
Collaborations: Kyeong-Joon Ahn has collaborated with notable colleagues such as Geun-Young Yeom and Do-Haing Lee. Their combined expertise contributes to advancing research initiatives and driving innovations within the realm of atomic layer deposition.
Conclusion: Kyeong-Joon Ahn has established himself as a pivotal figure in the field of atomic layer deposition technology. His innovative patent not only addresses challenges in the deposition process but also paves the way for future advancements in material applications. As research continues, Ahn's contributions are likely to inspire further developments in nanotechnology and related fields.