Kwnag-Soo Seol

Title: Kwnag-Soo Seol: Innovator in Resistive Memory Technology

Introduction

Kwnag-Soo Seol is a notable inventor based in Yongin-si, South Korea. He has made significant contributions to the field of memory devices, particularly through his innovative patent related to resistive memory technology.

Latest Patents

Kwnag-Soo Seol holds a patent for "Resistive memory devices including vertical transistor arrays and related fabrication methods." This patent describes a resistive memory device that incorporates a vertical transistor and a variable resistance layer. The vertical transistor features a gate electrode positioned on the surface of a substrate, along with a gate insulation layer that extends along the sidewall of the gate electrode. A single crystalline silicon layer is situated on the substrate's surface adjacent to the gate insulation layer, with a portion of this layer defining a channel region that extends perpendicularly to the substrate's surface. The variable resistance layer is placed on the single crystalline silicon layer and is electrically insulated from the gate electrode. The patent also discusses related devices and fabrication methods.

Career Highlights

Kwnag-Soo Seol is currently employed at Samsung Electronics Co., Ltd., where he continues to advance his research and development in memory technologies. His work has contributed to the evolution of resistive memory devices, which are crucial for modern computing applications.

Collaborations

Some of Kwnag-Soo Seol's notable coworkers include Deok-kee Kim and In Kyeong Yoo, who have collaborated with him on various projects within the field of memory technology.

Conclusion

Kwnag-Soo Seol's innovative work in resistive memory devices showcases his expertise and commitment to advancing technology in the electronics industry. His contributions are significant in shaping the future of memory technology.