Kwing F Lee

Title: Kwing F Lee: Innovator in MOS Device Technology

Introduction

Kwing F Lee is a notable inventor based in Aberdeen, NJ (US), recognized for his contributions to the field of semiconductor technology. He holds a total of 4 patents, showcasing his innovative approach to manufacturing MOS devices.

Latest Patents

One of his latest patents is titled "Method for making a MOS device." This patent describes a method for manufacturing an MOS device, such as a PMOS transistor, on a silicon wafer. The method includes steps leading to the formation of a polysilicon gate electrode, along with at least one ion-implantation step for forming source and drain junction regions in the silicon wafer. Additionally, the method comprises the step of forming a first sidewall that is contactingly disposed adjacent to the polysilicon gate electrode before the ion-implantation step. The resulting source and drain junction regions are designed to be at least partially excluded from the portion of the silicon wafer that directly underlies the polysilicon gate electrode and the sidewall. In preferred embodiments, a first ion-implantation step is performed after the first sidewall is formed, followed by the formation of a second sidewall adjacent to the first, and a second ion-implantation step, resulting in further source and drain junction regions.

Another significant patent is for an "Insulated gate field-effect transistor with pulse-shaped doping." This invention provides a silicon MOSFET that can be manufactured with an effective channel length of under one micrometer without incurring severe short-channel effects. The MOSFET includes first and second channel regions located between the source and drain regions, with the first channel region overlaying the second. The second channel region has a higher carrier density than the first and functions as a buried ground plane.

Career Highlights

Kwing F Lee has had a distinguished career, working with prominent organizations such as AT&T Bell Laboratories and American Telephone & Telegraph Company. His work at these institutions has significantly influenced the development of semiconductor technologies.

Collaborations

Throughout his career, Kwing F Lee has collaborated with notable colleagues, including Ran-Hong Yan and Tzu-Yin Chiu. These collaborations have contributed to advancements in the field of semiconductor technology.

Conclusion

Kwing F Lee's innovative work in MOS device technology and his contributions to the semiconductor industry highlight his importance