Kwang Soon Ahn

Title: Kwang Soon Ahn: Innovator in GaN-Based Thin Film Technology

Introduction

Kwang Soon Ahn is a prominent inventor based in Kwangju, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of p-type GaN-based thin films. His innovative methods have the potential to enhance the performance of various electronic devices.

Latest Patents

Kwang Soon Ahn holds a patent for a "Method for manufacturing p-type GaN based thin film using nitridation." This patent discloses a technique for producing a high conductivity p-type GaN-based thin film that exhibits superior electrical and optical properties. The method involves the use of nitridation and rapid thermal annealing (RTA) in combination. A GaN-based epitaxial layer is grown to a desired thickness while being doped with magnesium (Mg) using a hydrogen carrier gas through a metal-organic chemical vapor deposition (MOCVD) process. The resulting film undergoes nitridation with nitrogen plasma and RTA, leading to a p-type GaN-based thin film with high hole concentration and low resistivity. This innovation is particularly useful in the fabrication of blue and white LEDs, laser diodes, and other electronic devices.

Career Highlights

Kwang Soon Ahn is affiliated with the Kwangju Institute of Science and Technology, where he conducts research and development in semiconductor materials. His work has garnered attention for its practical applications in the electronics industry.

Collaborations

Some of his notable coworkers include Sang Woo Kim and Ji Myon Lee, who have collaborated with him on various research projects.

Conclusion

Kwang Soon Ahn's contributions to the field of semiconductor technology, particularly through his patented methods for manufacturing p-type GaN-based thin films, highlight his role as an innovator. His work continues to influence the development of advanced electronic devices.