Kurt Strater

Title: Innovations by Kurt Strater

Introduction

Kurt Strater is a notable inventor based in Brookside, NJ (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of methods to enhance the performance of P-channel transistors. With a total of 2 patents to his name, Strater's work has had a meaningful impact on the industry.

Latest Patents

Strater's latest patents focus on selective recrystallization techniques aimed at reducing leakage in P-channel transistors. One of his inventions involves a silicon layer formed atop a sapphire substrate that is selectively recrystallized. This process enhances the crystallinity of the N-well region where a P-channel device is to be formed, thereby reducing leakage while maintaining the high ultraviolet reflectance of the P-well region for an N-channel device. The method includes implanting silicon into the designated area of the silicon layer and introducing an N-conductivity type impurity. The structure is then annealed at a low temperature, activating the phosphorus and causing local recrystallization without redistributing the phosphorus. The result is a precisely tailored, low leakage P-channel device integrated with a high UVR-based N-channel device.

Career Highlights

Kurt Strater has built a successful career at Harris Corporation, where he has been instrumental in advancing semiconductor technologies. His innovative approaches have contributed to the development of high-performance electronic devices.

Collaborations

Strater has collaborated with notable colleagues, including Edward F Hand and William H Speece, to further enhance the research and development efforts at Harris Corporation.

Conclusion

Kurt Strater's contributions to semiconductor technology through his innovative patents and collaborations highlight his role as a significant inventor in the field. His work continues to influence advancements in electronic device performance.