Company Filing History:
1 out of 1,075 
1 out of 832,891 Years Active: 2004-2006
Title: Kurihara Kazuhiro: Innovator in Flash Memory Technology
Introduction
Kurihara Kazuhiro is a notable inventor based in Sunnyvale, CA (US). He has made significant contributions to the field of flash memory technology, holding a total of 2 patents. His work focuses on enhancing the efficiency and functionality of non-volatile memory devices.
Latest Patents
Kazuhiro's latest patents include a "System and method for Y-decoding in a flash memory device." This invention discloses a system for column selection in a non-volatile memory cell array, where memory cells are arranged in a rectangular array. The design features a linear chain of memory cells within a row, with a common word line coupled to each gate. A four-column Y-decoder is utilized to select column lines for sense operations, allowing for effective measurement during read or verification processes.
Another significant patent is the "Path gate driver circuit." This invention comprises a shunt stage, a level shifter stage, a pull-up stage, and an output stage. The shunt stage is connected to a control signal path, while the level shifter stage manages control signals and boosts supply levels. The output stage provides a boosted control signal in response to the control, enhancing the overall performance of the circuit.
Career Highlights
Throughout his career, Kazuhiro has worked with various companies, including Spansion LLC. His experience in the industry has allowed him to develop innovative solutions that address the challenges faced in memory technology.
Collaborations
Kazuhiro has collaborated with notable professionals in the field, including Tien-Chun Yang and Pau-Ling Chen. These partnerships have contributed to the advancement of his inventions and the overall progress in memory technology.
Conclusion
Kurihara Kazuhiro's contributions to flash memory technology through his patents and collaborations highlight his role as an influential inventor in the field. His innovative solutions continue to shape the future of non-volatile memory devices.