Company Filing History:
Years Active: 1981-1992
Title: Kuniyuki Hamano: Innovator in Semiconductor Technology
Introduction
Kuniyuki Hamano is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.
Latest Patents
Hamano's latest patents include a semiconductor device featuring a multilayered wiring structure. This innovative device comprises a semiconductor substrate with semiconductor elements and multiple wiring layers formed via porous insulating films. The design emphasizes a compact insulating film covering the wiring layers, with specific pore sizes and volumes in the porous insulating film to optimize performance. Another notable patent involves a high-density semiconductor device that includes a channel region defined by semiconductor regions, an insulator film, and a conductive layer. This invention aims to improve the isolation of the channel region and enhance the detection of majority carriers.
Career Highlights
Throughout his career, Kuniyuki Hamano has worked with notable companies such as Nippon Electric Co., Ltd. and NEC Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.
Collaborations
Hamano has collaborated with esteemed colleagues, including Toshiyuki Ohta and Mitsuru Sakamoto. These partnerships have contributed to the advancement of his research and inventions.
Conclusion
Kuniyuki Hamano's contributions to semiconductor technology demonstrate his innovative spirit and dedication to advancing the field. His patents reflect a commitment to improving device performance and efficiency, solidifying his reputation as a leading inventor in the industry.