Yokohama, Japan

Kuniaki Utsumi


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Kuniaki Utsumi: Innovator in Semiconductor Technology

Introduction

Kuniaki Utsumi is a notable inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Utsumi holds a patent for a semiconductor device that features a non-silicide region where no silicide is formed on the diffusion layer. This semiconductor device includes first and second MOSFETs that correspond to at least a first power source voltage and a second power source voltage, which is lower than the first. The design incorporates non-silicide regions in the drain portions of both MOSFETs, enhancing their functionality and efficiency.

Career Highlights

Kuniaki Utsumi is associated with Kabsuhiki Kaisha Toshiba, a prominent company in the technology sector. His work has focused on advancing semiconductor devices, contributing to the evolution of electronic components that are crucial in various applications.

Collaborations

Utsumi has collaborated with notable colleagues, including Takayuki Hiraoka and Tsutomu Kojima. Their combined expertise has fostered innovation and development in semiconductor technology.

Conclusion

Kuniaki Utsumi's contributions to semiconductor technology through his patent demonstrate his commitment to innovation in the field. His work continues to influence the development of advanced electronic devices.

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