Taoyuan, Taiwan

Kun-Han Lin

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Kun-Han Lin: Innovator in Semiconductor Technology

Introduction

Kun-Han Lin is a prominent inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device and its fabrication method.

Latest Patents

Kun-Han Lin holds a patent for a semiconductor device that includes a substrate, a gate dielectric layer, a gate electrode, a field plate, a source electrode, and a drain electrode. The gate dielectric layer is designed with varying thicknesses, which enhances the performance of the semiconductor device. This invention is crucial for advancing semiconductor technology and improving device efficiency.

Career Highlights

Kun-Han Lin is currently employed at Vanguard International Semiconductor Corporation. His role at the company allows him to work on cutting-edge semiconductor technologies. His expertise and innovative mindset have positioned him as a valuable asset in the industry.

Collaborations

Throughout his career, Kun-Han Lin has collaborated with talented individuals such as Syed-Sarwar Imam and Chia-Hao Lee. These collaborations have fostered a creative environment that encourages innovation and the development of new technologies.

Conclusion

Kun-Han Lin's contributions to semiconductor technology exemplify the spirit of innovation. His patent and work at Vanguard International Semiconductor Corporation highlight his commitment to advancing the field. His collaborations further enhance the potential for future breakthroughs in semiconductor devices.

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