Kuan-Hsiang Mao

Title: Kuan-Hsiang Mao: Innovator in Semiconductor Technology

Introduction

Kuan-Hsiang Mao is a notable inventor based in Kaohsiung, CN. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Kuan-Hsiang Mao holds a patent for a "Semiconductor device with cavity carrier and method therefor." This patent describes a method of forming a semiconductor device that includes creating a first cavity at a major surface of a first encapsulant. A first semiconductor die is affixed on this surface, while a second semiconductor die is placed within the cavity. The invention also details how a second encapsulant encapsulates both semiconductor dies and exposed portions of the first encapsulant. Additionally, a package substrate is formed on the second encapsulant, which includes conductive traces interconnected to both semiconductor dies. This innovative approach enhances the functionality and efficiency of semiconductor devices.

Career Highlights

Kuan-Hsiang Mao is currently employed at NXP B.V., a leading company in the semiconductor industry. His work focuses on advancing semiconductor technologies and improving device performance. With a total of 1 patent, he has established himself as a valuable contributor to the field.

Collaborations

Throughout his career, Kuan-Hsiang Mao has collaborated with esteemed colleagues such as Zhiwei Gong and Neil Thomas Tracht. These collaborations have further enriched his work and contributed to the development of innovative semiconductor solutions.

Conclusion

Kuan-Hsiang Mao is a prominent figure in semiconductor innovation, with a focus on enhancing device technology through his patented methods. His contributions continue to impact the industry positively.