Niigata, Japan

Kouichi Nishimaki


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 14(Granted Patents)


Company Filing History:


Years Active: 1993

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1 patent (USPTO):Explore Patents

Title: Kouichi Nishimaki: Innovator in Semiconductor Substrate Technology

Introduction

Kouichi Nishimaki is a notable inventor based in Niigata, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of processes and apparatuses for creating discrete type substrates.

Latest Patents

Nishimaki holds a patent for a process and apparatus for making discrete type substrates by re-slicing. This invention pertains to the creation of semiconductor substrates from monolithic silicon wafers, which are essential for discrete elements such as transistors and diodes. The innovative aspect of his patent involves re-slicing the silicon wafer into two pieces, allowing for the doping of impurity diffused layers on both sides while leaving the core portion free of such layers. This method enables the simultaneous production of two discrete elements from a single wafer.

Career Highlights

Kouichi Nishimaki has been associated with Naoetsu Electronics Co., Ltd., where he has applied his expertise in semiconductor technology. His work has contributed to advancements in the efficiency and effectiveness of semiconductor manufacturing processes.

Collaborations

Nishimaki has collaborated with Tsutomu Satoh, further enhancing the development of innovative solutions in the semiconductor industry.

Conclusion

Kouichi Nishimaki's contributions to semiconductor substrate technology through his innovative patent demonstrate his significant role in advancing the field. His work continues to impact the development of discrete semiconductor elements, showcasing the importance of innovation in technology.

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