Aizuwakamatsu, Japan

Kouhei Uchida


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2021-2025

where 'Filed Patents' based on already Granted Patents

3 patents (USPTO):

Title: Kouhei Uchida: Innovator in Semiconductor Technology

Introduction

Kouhei Uchida is a prominent inventor based in Aizuwakamatsu, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on advancing semiconductor devices, particularly in the area of self-aligned contacts.

Latest Patents

Uchida's latest patents include innovative designs for semiconductor devices. One of his notable patents is for "Self-aligned semiconductor device contacts having widths less than minimum lithography limits." This invention involves forming hard mask pillars on a substrate surface, creating sacrificial spacers, and etching gate trenches to implant channels and sources. The process culminates in filling contact trenches with conductive material to establish contacts. Another significant patent is for "Self-aligned trench MOSFET contacts having widths less than minimum lithography limits," which shares a similar methodology and aims to enhance the efficiency of semiconductor devices.

Career Highlights

Kouhei Uchida is currently employed at Semiconductor Components Industries, LLC, where he continues to push the boundaries of semiconductor technology. His expertise and innovative approach have positioned him as a key player in the industry.

Collaborations

Uchida has collaborated with notable colleagues, including Mitsuru Soma and Masahiro Shimbo. Their combined efforts contribute to the advancement of semiconductor technologies and innovations.

Conclusion

Kouhei Uchida's work in semiconductor technology exemplifies the spirit of innovation. His patents reflect a commitment to enhancing device performance and efficiency. Through his career, he continues to influence the semiconductor industry significantly.

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