Kiyoshi Shirai

Title: Kiyoshi Shirai: Innovator in DRAM Technology

Introduction

Kiyoshi Shirai is a notable inventor based in Dallas, TX (US). He has made significant contributions to the field of semiconductor technology, particularly in dynamic random-access memory (DRAM) cells. His innovative approach has led to advancements that enhance the performance and efficiency of memory devices.

Latest Patents

Kiyoshi Shirai holds a patent for a "Method of making trench DRAM cell with stacked capacitor." This invention provides a detailed methodology for fabricating DRAM cells, structures, and manufacturing methods. The first embodiment of this patent describes a DRAM cell featuring a trench capacitor, where the first plate is formed as a diffusion on the outside surface of a trench in the substrate. The second plate consists of a conductive region formed inside the trench. This design allows for improved misalignment tolerance, eliminating the need for strict alignment tolerances in the layout of the DRAM cell.

Career Highlights

Kiyoshi Shirai is associated with Texas Instruments Corporation, a leading company in the semiconductor industry. His work has been instrumental in developing advanced memory technologies that are crucial for modern electronic devices. His innovative designs have contributed to the efficiency and reliability of DRAM cells.

Collaborations

Throughout his career, Kiyoshi has collaborated with esteemed colleagues such as Bing-Whey Shen and Masaaki Yashiro. These collaborations have fostered a creative environment that has led to groundbreaking advancements in semiconductor technology.

Conclusion

Kiyoshi Shirai's contributions to the field of DRAM technology exemplify the impact of innovative thinking in the semiconductor industry. His patent and work at Texas Instruments Corporation highlight his role as a key player in advancing memory technology.