Kiyoshi Izumi

Title: Kiyoshi Izumi: Innovator in Semiconductor Memory Technology

Introduction

Kiyoshi Izumi is a notable inventor based in San Jose, California. He has made significant contributions to the field of semiconductor memory devices, particularly in the development of multi-bit flash electrically erasable programmable read-only memory (EEPROM) devices. His innovative work focuses on enhancing memory technology through unique processes and designs.

Latest Patents

Kiyoshi Izumi holds a patent for a "Process for making a dual bit memory device with isolated polysilicon floating gates." This invention relates to semiconductor memory devices and specifically addresses the functionality of multi-bit flash EEPROM devices. The patent describes a memory device that includes a floating gate transistor with dual polysilicon floating gates, separated by an isolation opening. This design allows for effective charge trapping within a floating gate to indicate a 0 or 1 bit state, thereby improving memory performance.

Career Highlights

Throughout his career, Kiyoshi has focused on advancing semiconductor technology. His work has led to the development of innovative memory devices that enhance data storage capabilities. With a patent count of 1 patent, he has established himself as a key figure in the field of memory technology.

Collaborations

Kiyoshi has collaborated with notable colleagues such as Jusuke Ogura and Masaru Yano. Their combined expertise has contributed to the advancement of semiconductor memory technologies.

Conclusion

Kiyoshi Izumi's contributions to semiconductor memory technology highlight his innovative spirit and dedication to improving data storage solutions. His patent for a dual bit memory device showcases his ability to address complex challenges in the field. Through his work, he continues to influence the future of memory technology.