Company Filing History:
Years Active: 2012
Title: Kiyonaga Fujii: Innovator in Semiconductor Technology
Kiyonaga Fujii is a notable inventor based in Kasugai, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the area of leak current detection circuits. His work has implications for improving the accuracy of detecting leak currents in MOS transistors.
Latest Patents
Kiyonaga Fujii holds a patent for a leak current detection circuit, body bias control circuit, semiconductor device, and semiconductor device testing method. This innovative circuit enhances the accuracy of detecting leak currents in MOS transistors without increasing the circuit scale. The design includes at least one P-channel MOS transistor connected to a high potential power supply, which is normally inactivated and generates a first leak current. Additionally, it features at least one N-channel MOS transistor that is coupled between a low potential power supply and the P-channel MOS transistor, which also generates a second leak current. A detector is incorporated to identify the potential generated at a node between the P-channel and N-channel MOS transistors based on the first and second leak currents.
Career Highlights
Kiyonaga Fujii is associated with Fujitsu Semiconductor Limited, where he has been instrumental in advancing semiconductor technologies. His expertise in circuit design and semiconductor devices has positioned him as a valuable asset in the industry.
Collaborations
Kiyonaga Fujii has collaborated with Yasushige Ogawa, contributing to the development of innovative semiconductor solutions. Their partnership has fostered advancements in the field, particularly in enhancing the functionality and efficiency of semiconductor devices.
Conclusion
Kiyonaga Fujii's contributions to semiconductor technology, particularly through his patent for a leak current detection circuit, demonstrate his innovative spirit and technical expertise. His work continues to influence the industry and improve the performance of semiconductor devices.