Higashimatsuyama, Japan

Kimio Ogata


Average Co-Inventor Count = 4.0

ph-index = 3

Forward Citations = 44(Granted Patents)


Company Filing History:


Years Active: 1991-1992

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3 patents (USPTO):Explore Patents

Title: Kimio Ogata: Innovator in Semiconductor Technology

Introduction

Kimio Ogata is a prominent inventor based in Higashimatsuyama, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of high voltage, high speed Schottky diodes. With a total of three patents to his name, Ogata's work has had a notable impact on the industry.

Latest Patents

Ogata's latest patents include a method of fabricating a high voltage, high speed Schottky semiconductor. This innovative diode features an electrode made of aluminum or a similar Schottky barrier metal, which is formed on a semiconductor region to create a Schottky barrier. Additionally, an extremely thin resistive layer, typically oxidized titanium, surrounds the barrier metal electrode and is electrically connected to it. This resistive layer creates a Schottky barrier at its interface with the semiconductor region, expanding the depletion region and enhancing the voltage withstanding capability of the diode.

Another significant patent by Ogata is the high voltage, high speed Schottky semiconductor device and method. Similar to his previous work, this invention also incorporates an aluminum or Schottky barrier metal electrode on a semiconductor region, along with the thin resistive layer. The design aims to prevent the concentration of the electric field at the periphery of the barrier metal electrode, thereby improving the overall performance of the diode.

Career Highlights

Kimio Ogata is currently associated with Sanken Electric Co., Ltd., where he continues to innovate in the semiconductor field. His expertise and dedication to research have positioned him as a key figure in the development of advanced semiconductor devices.

Collaborations

Ogata has collaborated with notable coworkers, including Koji Ohtsuka and Yoshiro Kutsuzawa. Their combined efforts have contributed to the advancement of semiconductor technologies and the successful development of innovative products.

Conclusion

Kimio Ogata's contributions to semiconductor technology, particularly through his patents on high voltage, high speed Schottky diodes, highlight his role as a leading inventor in the field. His work continues to influence the industry and pave the way for future innovations.

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