Location History:
- Raleigh, NC (US) (2001)
- Raliegh, NC (US) (2003)
Company Filing History:
Years Active: 2001-2003
Title: Kieran M Tracy: Innovator in Gallium Nitride Microelectronics
Introduction
Kieran M Tracy is a notable inventor based in Raleigh, NC (US). He has made significant contributions to the field of microelectronics, particularly in the fabrication of gallium nitride layers on silicon substrates. With a total of two patents to his name, his work is paving the way for advancements in microelectronic technologies.
Latest Patents
Kieran's latest patents focus on methods of fabricating gallium nitride microelectronic layers on silicon layers. The first patent describes a process where a surface of a (111) silicon layer is converted to 3C-silicon carbide. Following this, a layer of 3C-silicon carbide is epitaxially grown on the converted surface. A layer of 2H-gallium nitride is then grown on the epitaxially grown layer, which is laterally grown to produce the gallium nitride microelectronic layer. The silicon layer can be a (111) silicon substrate or part of a Separation by IMplanted OXygen (SIMOX) silicon substrate. The second patent elaborates on similar methods and structures formed thereby, emphasizing the importance of lateral growth techniques such as Epitaxial Lateral Overgrowth (ELO) and pendeoepitaxial techniques.
Career Highlights
Kieran M Tracy is affiliated with North Carolina State University, where he continues to engage in innovative research and development. His work has garnered attention for its potential applications in various microelectronic devices.
Collaborations
Kieran collaborates with esteemed colleagues, including Kevin J Linthicum and Thomas Gehrke, who contribute to his research endeavors and enhance the impact of his inventions.
Conclusion
Kieran M Tracy's contributions to the field of gallium nitride microelectronics are significant and impactful. His innovative methods and collaborative efforts are shaping the future of microelectronic technologies.