Company Filing History:
1 out of 832,912 Years Active: 2022
Title: Keyue Wu - Innovator in Resistive Memory Technology
Introduction
Keyue Wu is a notable inventor based in Lu'an, China. He has made significant contributions to the field of resistive memory technology, particularly through his innovative work on Si2Te3 resistive memory devices.
Latest Patents
Keyue Wu holds a patent for a ReRAM device that utilizes 2-D SiTe (silicon telluride) nanowires or nanoplates. This invention showcases a unique reversible resistance switching behavior that is driven by an applied electrical potential. The SiTe nanowires can switch from a high-resistance state (HRS) to a low-resistance state (LRS) with stability unless an opposite potential is applied. This advancement introduces a new class of resistive switching based on semiconductor materials rather than traditional dielectric materials.
Career Highlights
Throughout his career, Keyue Wu has focused on developing cutting-edge technologies that enhance memory storage capabilities. His work on resistive memory devices has the potential to revolutionize the way data is stored and accessed in electronic devices.
Collaborations
Keyue Wu has collaborated with notable colleagues, including Jingbiao Cui and Jiyang Chen, to further advance research in the field of resistive memory technology.
Conclusion
Keyue Wu's innovative contributions to resistive memory technology highlight his role as a leading inventor in this field. His work not only advances the technology but also opens new avenues for future research and development.