Location History:
- Tokyo-to, JP (2003)
- Kanagawa, JP (2006 - 2007)
Company Filing History:
Years Active: 2003-2007
Title: Kenichi Morikawa: Innovator in Gallium Nitride Technology
Introduction
Kenichi Morikawa is a prominent inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of gallium nitride (GaN) devices. With a total of three patents to his name, Morikawa's work has advanced the capabilities of semiconductor devices.
Latest Patents
Morikawa's latest patents focus on gallium nitride compound semiconductor devices. One of his notable inventions is a GaN compound semiconductor device that allows for free process design and optimal device characteristics. This device features a laminate structure that includes both n-type and p-type GaN compound semiconductor layers. The n electrode is formed on the n-type layer and includes an aluminum layer in contact with the n-type GaN, topped with a metal layer of rhodium, iridium, platinum, or palladium. The p electrode, on the other hand, is made of a thin layer of palladium, platinum, or other specified metals, ensuring ohmic contact without the need for active annealing.
Career Highlights
Throughout his career, Kenichi Morikawa has worked with notable companies such as Stanley Electric Co., Ltd and Stanley Electric Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.
Collaborations
Morikawa has collaborated with esteemed colleagues, including Masahiko Tsuchiya and Naochika Horio. Their joint efforts have furthered advancements in the field of semiconductor devices.
Conclusion
Kenichi Morikawa's contributions to gallium nitride technology exemplify his innovative spirit and dedication to advancing semiconductor devices. His patents reflect a commitment to enhancing device performance and design flexibility.