Kenenth G Moerschel

Title: Kenenth G Moerschel: Innovator in Integrated Circuit Technology

Introduction

Kenenth G Moerschel is a notable inventor based in Bethlehem, PA (US). He has made significant contributions to the field of integrated circuit technology. His innovative approach has led to the development of a unique method for device isolation in integrated circuits.

Latest Patents

Moerschel holds a patent for a "Method for integrated circuit device isolation." This patent describes an integrated circuit fabrication process that creates field oxide regions in a substrate. The process involves forming masking layers of oxide, nitride, and deposited silicon dioxide on the substrate. A pattern defining the field oxide regions is introduced through these masking layers. The resulting field oxide region features steep sidewalls bordered by the masking layers. The process includes growing a thin layer of oxide on the exposed substrate, followed by forming a conformal second layer of nitride and a polycrystalline material. The selective removal of the polycrystalline layer ensures that only the portion covering the sidewalls remains. The remaining layers are then manipulated to create grooves in the field oxide as it is grown.

Career Highlights

Moerschel's career is marked by his innovative contributions to integrated circuit technology. His work has been instrumental in advancing the methods used in semiconductor fabrication. He is currently associated with AT&T IPM Corp., where he continues to develop cutting-edge technologies.

Collaborations

Throughout his career, Moerschel has collaborated with esteemed colleagues, including Tzu-Yin Chiu and Frank M Erceg. These collaborations have further enriched his work and contributed to the advancements in the field.

Conclusion

Kenenth G Moerschel's contributions to integrated circuit technology exemplify the spirit of innovation. His patented methods have paved the way for advancements in semiconductor fabrication, showcasing his expertise and dedication to the field.