Company Filing History:
Years Active: 2005-2011
Title: The Innovations of Kelly James DeGregorio
Introduction
Kelly James DeGregorio is a notable inventor based in Boise, Idaho, recognized for her contributions to memory technology. With a total of two patents to her name, she has made significant advancements in the field of semiconductor memory cells. Her work focuses on enhancing memory retention and optimizing performance parameters.
Latest Patents
DeGregorio's latest patents include the Independently-double-gated transistor memory (IDGM) and a SRAM cell. The IDGM patent describes memory cells constructed from double-gated four-terminal transistors that allow independent gate control. This innovation enables DRAM cells to utilize one, two, or three transistors, with configurations that can include or exclude a bit storage capacitor. The design also addresses the industry-wide Write Disturb problem by using ferroelectric materials as gate insulators. The SRAM cell patent features a unique architecture that incorporates double-gated PMOS and NMOS transistors to form a latch, enhancing the retention of values.
Career Highlights
DeGregorio is currently employed at American Semiconductor Corporation, where she continues to push the boundaries of memory technology. Her innovative designs are compatible with SOI logic circuitry, making them suitable for embedded RAM in System on Chip (SOC) applications.
Collaborations
Throughout her career, DeGregorio has collaborated with esteemed colleagues such as Stephen A Parke and Douglas R Hackler, Sr. These partnerships have contributed to her success and the advancement of her projects.
Conclusion
Kelly James DeGregorio's work in memory technology exemplifies the spirit of innovation. Her patents reflect a commitment to improving semiconductor performance and addressing industry challenges. Her contributions will undoubtedly influence the future of memory technology.