Keith J Lindberg

Title: Keith J Lindberg: Innovator in Semiconductor Technology

Introduction

Keith J Lindberg is a notable inventor based in Sherman, Texas. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to backside gettering methods. His work has implications for the manufacturing and performance of electronic components.

Latest Patents

Lindberg holds a patent for a "Backside gettering method employing a monocrystalline germanium-silicon." This method addresses the issue of metal atom contamination in silicon substrates. The patent describes a process where a smoothed or polished first surface has a thin germanium-silicon layer deposited on it. A silicon layer is then applied to seal the germanium-silicon layer between the substrate and the silicon layer. This innovative approach allows for the effective diffusion of metal atoms to misfit dislocations during the heating process of device fabrication.

Career Highlights

Lindberg is associated with Texas Instruments Corporation, a leading company in the semiconductor industry. His work at Texas Instruments has allowed him to explore and develop advanced technologies that enhance the performance of electronic devices. His patent is a testament to his expertise and innovative thinking in the field.

Collaborations

Throughout his career, Lindberg has collaborated with talented individuals such as Greg Gopffarth and Jerry D Smith. These collaborations have likely contributed to the successful development of his patented technologies.

Conclusion

Keith J Lindberg's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work continues to influence the manufacturing processes of electronic components, showcasing the importance of innovation in technology.