Yokohama, Japan

Kazumi Inou


Average Co-Inventor Count = 4.2

ph-index = 2

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 1996-1997

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3 patents (USPTO):Explore Patents

Title: Kazumi Inou: Innovator in Semiconductor Technology

Introduction

Kazumi Inou is a prominent inventor based in Yokohama, Japan. She has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. Her work focuses on the development and manufacturing of advanced semiconductor devices.

Latest Patents

Kazumi Inou's latest patents include innovative designs for semiconductor devices. One of her notable inventions is a semiconductor device and method of manufacturing the same, which involves the formation of a bipolar transistor on a silicon substrate with a silicon oxide film. This design features an n-silicon layer used as a collector layer, with a unique end face constituted by a (111) plane. Additionally, she has developed a semiconductor device that comprises a semiconductor substrate with multiple semiconductor regions and insulation films, enhancing the efficiency and functionality of semiconductor devices.

Career Highlights

Kazumi Inou is currently employed at Kabushiki Kaisha Toshiba, where she continues to push the boundaries of semiconductor technology. Her work has been instrumental in advancing the capabilities of electronic devices, making them more efficient and reliable.

Collaborations

Kazumi has collaborated with notable colleagues, including Yasuhiro Katsumata and Hiroomi Nakajima. These partnerships have fostered innovation and have contributed to the successful development of her patented technologies.

Conclusion

Kazumi Inou is a trailblazer in the semiconductor industry, with a strong portfolio of patents that reflect her expertise and innovative spirit. Her contributions continue to shape the future of technology in significant ways.

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