Kazuki Kishida

Title: Kazuki Kishida: Innovator in Semiconductor Technology

Introduction

Kazuki Kishida is a prominent inventor based in Kanagawa, Japan. He is known for his contributions to the field of semiconductor technology, particularly in the development of advanced semiconductor devices.

Latest Patents

Kishida holds a patent for a semiconductor device, semiconductor module, and wireless communication apparatus. This innovative semiconductor device includes a channel layer, a barrier layer, a source electrode, a drain electrode, a gate electrode, a side surface opening region, and a low-Ns region. The channel layer is composed of a first nitride semiconductor, while the barrier layer consists of a second nitride semiconductor that is positioned on top of the channel layer. The source and drain electrodes are located above the barrier layer, with the gate electrode situated between them. The design also features a side surface opening region on one of the gate electrode's side surfaces, and the low-Ns region is integrated into the channel layer, corresponding to the planar region with the gate electrode and side surface opening region. This low-Ns region has a lower carrier density compared to other areas of the channel layer.

Career Highlights

Kazuki Kishida is currently employed at Sony Semiconductor Solutions Corporation, where he continues to push the boundaries of semiconductor technology. His work has significantly impacted the development of efficient and advanced semiconductor devices.

Collaborations

Kishida collaborates with fellow inventor Katsuhiko Takeuchi, contributing to innovative projects within the semiconductor field.

Conclusion

Kazuki Kishida's work in semiconductor technology exemplifies the spirit of innovation and advancement in the industry. His patent and contributions at Sony Semiconductor Solutions Corporation highlight his role as a key figure in the development of cutting-edge semiconductor devices.