Company Filing History:
Years Active: 2019
Title: Kazuhiro Toi: Innovator in Semiconductor Manufacturing
Introduction
Kazuhiro Toi is a prominent inventor based in Hitachinaka, Japan. He has made significant contributions to the field of semiconductor manufacturing, particularly in the development of methods that enhance the reliability of semiconductor devices.
Latest Patents
Kazuhiro Toi holds a patent for a method of manufacturing a semiconductor device. This innovation addresses the challenges faced in manufacturing trench type MOSFETs. The patent ensures that the reliability of the semiconductor device is not compromised due to short circuits or reduced withstand voltage between the trench gate electrode and the source region. The process involves forming poly-silicon films inside a trench on the main surface of a semiconductor substrate and over the substrate itself. Phosphorus is thermally diffused into each poly-silicon film from a phosphorous film placed above it. Additionally, a silicon oxide film formed during the thermal diffusion process is removed through a first dry etching process using fluorocarbon or hydroxy-fluorocarbon gases. Finally, a second dry etching process using Cl2 gas exposes an insulating film, leading to the formation of a trench gate electrode that includes the poly-silicon film. Kazuhiro Toi has 1 patent to his name.
Career Highlights
Kazuhiro Toi is currently employed at Renesas Electronics Corporation, where he continues to work on innovative semiconductor technologies. His expertise in the field has made him a valuable asset to the company and the industry as a whole.
Collaborations
Throughout his career, Kazuhiro has collaborated with notable colleagues, including Kazuya Horie and Katsuhiro Uchimura. These collaborations have furthered advancements in semiconductor technology and innovation.
Conclusion
Kazuhiro Toi's contributions to semiconductor manufacturing highlight his role as an influential inventor in the industry. His innovative methods not only improve device reliability but also pave the way for future advancements in semiconductor technology.