Higashimurayama, Japan

Katura Abe


Average Co-Inventor Count = 7.0

ph-index = 2

Forward Citations = 27(Granted Patents)


Company Filing History:

goldMedal2 out of 832,680 
Other
 patents

Years Active: 2001-2004

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2 patents (USPTO):Explore Patents

Title: Katura Abe: Innovator in Semiconductor Technology

Introduction

Katura Abe is a prominent inventor based in Higashimurayama, Japan. She has made significant contributions to the field of semiconductor technology, holding two patents that showcase her innovative approach to logic circuit design.

Latest Patents

Abe's latest patents include a "Semiconductor device with plural unit regions in which one or more MOSFETs are formed" and a "Semiconductor integrated circuit device." Both patents describe a structure where multiple unit areas containing MOSFETs are arranged in a specific direction. Each unit area features interconnections that facilitate the formation of logic circuits. The designs emphasize the importance of dedicated wiring areas that enhance the functionality and efficiency of the circuits.

Career Highlights

Throughout her career, Katura Abe has demonstrated a commitment to advancing semiconductor technology. Her work has been recognized for its innovative approach to integrating logic circuits, which has implications for various applications in electronics.

Collaborations

Abe has collaborated with notable colleagues, including Isamu Fujii and Kiyoshi Nakai. These partnerships have contributed to her success and the development of her patented technologies.

Conclusion

Katura Abe is a trailblazer in the semiconductor industry, with her patents reflecting her expertise and innovative spirit. Her contributions continue to influence the field and inspire future advancements in technology.

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