Company Filing History:
Years Active: 2002-2004
Title: Innovations of Katsujirou Arai in Semiconductor Technology
Introduction
Katsujirou Arai is a notable inventor based in Kyoto, Japan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to device design and functionality.
Latest Patents
One of his latest patents is focused on a semiconductor device and method for driving the same. This invention features a field oxide surrounding an active region, an N-type doped layer formed within the active region, and an electrode positioned on the field oxide near the active region, all built on a P-type semiconductor substrate. During operation as a constant voltage device, a desired voltage is applied to the electrode. This design effectively suppresses the trapping of carriers at the interface between the field oxide and the semiconductor region, which is typically caused by reverse breakdown phenomena at the pn junction between the doped layer and the P-type semiconductor substrate. Consequently, the variation in strength of the electric field between the doped layer and the semiconductor substrate is minimized. This innovation ultimately leads to a reduction in the variation of reverse withstand voltage, which is usually influenced by reverse breakdown voltage at a pn junction for semiconductor devices functioning as constant voltage devices.
Career Highlights
Katsujirou Arai is currently associated with Matsushita Electric Industrial Co., Ltd., where he continues to develop groundbreaking technologies in the semiconductor sector. His work has been instrumental in advancing the efficiency and reliability of semiconductor devices.
Collaborations
He has collaborated with notable colleagues such as Hirotsugu Honda and Hiroyuki Doi, contributing to a dynamic environment of innovation and research.
Conclusion
Katsujirou Arai's contributions to semiconductor technology reflect his dedication to innovation and excellence. His patents not only enhance device performance but also pave the way for future advancements in the field.