Karl R Hofmann

Title: Innovations of Karl R. Hofmann

Introduction

Karl R. Hofmann is a notable inventor based in Kingston, NJ, who has made significant contributions to the field of semiconductor technology. He is recognized for his innovative work in developing advanced electronic components that enhance performance and efficiency.

Latest Patents

Hofmann holds a patent for a modulation-doped high electron mobility transistor with an n-i-p-i structure. This invention features a modulation-doped field effect transistor that includes an undoped semiconductor layer. It also incorporates an arrangement for supplying charge carriers into a region of the semiconductor layer adjacent to one side. Additionally, the invention provides a mechanism for locally modulating hole and electron density in another region adjacent to the opposite side of the semiconductor layer in a repeating pattern of alternations. This design effectively inhibits current flow in the direction of the alternations, showcasing Hofmann's innovative approach to semiconductor design.

Career Highlights

Karl R. Hofmann is currently employed at Siemens Corporate Research & Support, Inc., where he continues to contribute to advancements in technology. His work at Siemens has allowed him to collaborate with other experts in the field, further enhancing his impact on semiconductor research and development.

Collaborations

Hofmann has worked alongside Erhard Kohn, a fellow innovator in the semiconductor industry. Their collaboration has likely led to the development of cutting-edge technologies that push the boundaries of electronic components.

Conclusion

Karl R. Hofmann's contributions to the field of semiconductor technology, particularly through his patented innovations, highlight his role as a significant inventor. His work continues to influence advancements in electronic components, demonstrating the importance of innovation in technology.