Company Filing History:
Years Active: 2010
Title: Innovations of Kai-Hsun Lin in NAND Flash Memory Technology.
Introduction
Kai-Hsun Lin is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory technology, particularly in NAND flash memory systems. His innovative approach has led to the development of a unique method that enhances the functionality of NAND flash memory controllers.
Latest Patents
Kai-Hsun Lin holds a patent for a "NAND flash memory system with programmable connections between a NAND flash memory controller and a plurality of NAND flash memory modules and method thereof." This patent describes a method and related system for programming connections between a NAND flash memory controller and multiple NAND flash memory modules. The system includes a NAND flash memory controller that generates a switch signal and a swap signal based on the condition of one of the NAND flash memory modules. A remap module selectively couples the NAND flash memory modules to the controller according to the switch signal, while a swap module does so according to the swap signal. This innovative design improves the efficiency and flexibility of NAND flash memory systems.
Career Highlights
Kai-Hsun Lin is currently employed at Skymedi Corporation, where he continues to work on advancements in memory technology. His expertise in NAND flash memory systems has positioned him as a key player in the industry. With a total of 1 patent, he has demonstrated his ability to innovate and contribute to technological advancements.
Collaborations
Some of his notable coworkers include Chuang Cheng and Ching-Chang Chen. Their collaborative efforts have likely contributed to the success of various projects within Skymedi Corporation.
Conclusion
Kai-Hsun Lin's work in NAND flash memory technology exemplifies the spirit of innovation in the field. His patented methods and systems are paving the way for more efficient memory solutions. His contributions are significant in advancing the capabilities of NAND flash memory systems.