Jwinn Lein Su

Title: Innovations by Jwinn Lein Su

Introduction

Jwinn Lein Su is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative methods have the potential to enhance the performance and reliability of semiconductor devices.

Latest Patents

Jwinn Lein Su holds a patent for a method of making a grooved gate structure of a semiconductor device. This method is capable of providing a semiconductor device with a gate that has a thicker silicide or metal layer, resulting in lower interconnect resistance. Additionally, it features a polysilicon gate with a recessed tungsten structure, which helps prevent short circuits between the gate and the drain or source. The process involves forming a photo-resist on the polysilicon gate, followed by the growth of a silicon dioxide layer on the silicon substrate. The silicon dioxide layer and the thin gate oxidation layer on the drain/source are then etched vertically using reactive ion etching until the photo-resist and the silicon surface of the drain/source are exposed. This results in the formation of spacers on the side walls of the photo-resist/polysilicon gate. Upon stripping the photo-resist, the grooved gate structure is established on the semiconductor device.

Career Highlights

Jwinn Lein Su is affiliated with the National Science Council, where he continues to advance his research and development efforts in semiconductor technology. His work has been instrumental in pushing the boundaries of what is possible in this critical field.

Collaborations

Jwinn Lein Su collaborates with Ching-Fa Yeh, contributing to the advancement of semiconductor innovations.

Conclusion

Jwinn Lein Su's contributions to semiconductor technology through his innovative patent demonstrate his commitment to enhancing device performance and reliability. His work continues to influence the field significantly.