Location History:
- Tokyo, JP (1993)
- Kawasaki, JP (1997)
Company Filing History:
Years Active: 1993-1997
Title: Junya Nakahira: Innovator in Plasma Treatment Technologies
Introduction
Junya Nakahira is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in plasma treatment processes. With a total of 2 patents, his work has advanced the efficiency and effectiveness of semiconductor manufacturing.
Latest Patents
Nakahira's latest patents include innovative methods for cleaning plasma treatment chambers and depositing insulating layers on semiconductor devices. The first patent focuses on the in-situ cleaning of plasma treatment chambers using NF.sub.3 plasma treatment, which enhances the etching rate of oxide layers. This process involves inserting a low-pressure plasma treatment between NF.sub.3 treatments, utilizing gases such as oxygen, water vapor, and nitrogen trifluoride. The second patent outlines a method for depositing an insulating layer on an underlying layer, which includes forming a patterned wiring line on a first insulating layer and using a plasma-assisted CVD process to deposit a second insulating layer.
Career Highlights
Throughout his career, Nakahira has worked with notable companies, including Fujitsu Corporation and Fujitsu VLSI Limited. His experience in these organizations has allowed him to develop and refine his innovative techniques in semiconductor manufacturing.
Collaborations
Nakahira has collaborated with esteemed colleagues such as Masahiko Doki and Yuji Furumura. These partnerships have contributed to the advancement of his research and the successful implementation of his patented technologies.
Conclusion
Junya Nakahira's contributions to plasma treatment technologies have made a significant impact on the semiconductor industry. His innovative patents and collaborations highlight his dedication to advancing technology in this critical field.