Junling J Yen

Title: Junling J Yen: Innovator in Silicon Shadow Mask Technology

Introduction

Junling J Yen is a notable inventor based in Cupertino, CA, recognized for his contributions to the field of semiconductor technology. He has developed innovative methods that enhance the manufacturing processes of high-resolution silicon shadow masks.

Latest Patents

Junling J Yen holds a patent for a "Method for making high resolution silicon shadow masks." This invention focuses on creating a high-resolution shadow mask with minimal pattern distortion. The process involves forming a silicon membrane with a pattern of apertures etched through it by reactive ion etching, utilizing a silicon dioxide masking layer. The invention emphasizes controlling the stress of both the membrane and the masking layer to maintain optimal performance over large areas. This is achieved through a p/n junction electrochemical etch-stop process, followed by careful annealing of the oxide layer to adjust stress levels. The final steps include coating the membrane with a photoresist layer and transferring the desired pattern into the oxide layer, ultimately allowing for precise etching of apertures through the silicon membrane.

Career Highlights

Junling J Yen is currently associated with Nanostructures, Inc., where he continues to push the boundaries of innovation in semiconductor manufacturing. His work has significantly impacted the efficiency and quality of high-resolution shadow masks, which are crucial in various applications within the electronics industry.

Collaborations

He has collaborated with notable colleagues, including Philip E Mauger and Alex R Shimkunas, contributing to advancements in their respective fields.

Conclusion

Junling J Yen's innovative approach to silicon shadow mask technology exemplifies the importance of precision in semiconductor manufacturing. His contributions continue to influence the industry, showcasing the potential for further advancements in this critical area of technology.