Gumi-si, South Korea

Jung Ha Hwang

USPTO Granted Patents = 1 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Jung Ha Hwang: Innovator in Single-Crystal Ingot Growing Methods

Introduction

Jung Ha Hwang is a notable inventor based in Gumi-si, South Korea. He has made significant contributions to the field of materials science, particularly in the development of methods for growing single-crystal ingots. His innovative approach has implications for various applications in technology and manufacturing.

Latest Patents

Jung Ha Hwang holds a patent for a "Growing apparatus and single-crystal ingot growing method using the same." This patent describes a method that involves setting the location of a maximum gauss position (MGP) of a magnetic field above the surface of a melt. The method includes establishing a difference in intensity of the magnetic field between the center and edge points of the melt, as well as applying a specific intensity of the magnetic field to facilitate the growth of a single-crystal ingot. The magnetic field utilized is horizontal, with the MGP positioned between +50 mm to +150 mm above the melt surface, and the intensity difference ranging from 420G to 500G.

Career Highlights

Jung Ha Hwang is associated with Sk Siltron Co., Ltd., where he continues to advance his research and development efforts. His work has garnered attention for its potential to enhance the efficiency and quality of single-crystal ingot production.

Collaborations

Jung has collaborated with colleagues such as In Gu Kang and Do Won Song, contributing to a dynamic research environment that fosters innovation and technological advancement.

Conclusion

Jung Ha Hwang's contributions to the field of single-crystal ingot growth represent a significant advancement in materials science. His innovative methods and collaborative efforts continue to influence the industry positively.

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