Jun Ye

Title: Jun Ye: Innovator in SOI Devices for Plasma Display Technology

Introduction

Jun Ye is a prominent inventor based in Chengdu, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of SOI (Silicon-On-Insulator) devices for plasma display panel driver chips. His innovative work has led to advancements that enhance the performance and efficiency of display technologies.

Latest Patents

Jun Ye holds a patent for "SOI devices for plasma display panel driver chip." This invention includes a substrate, a buried oxide layer, and an n-type SOI layer arranged in a bottom-up order. The SOI layer is integrated with various devices, including HV-NMOS, HV-PMOS, Field-PMOS, LIGBT, CMOS, NPN, PNP, and HV-PNP devices. Notably, the SOI layer features an n+ doped region at the interface between the n-type SOI layer and the buried oxide layer, which has a higher doping concentration than the n-type SOI layer.

Career Highlights

Jun Ye is affiliated with the University of Electronic Science and Technology of China, where he continues to engage in research and development in semiconductor technologies. His work has garnered attention for its innovative approach to improving display technology.

Collaborations

Jun Ye has collaborated with notable colleagues, including Ming Qiao and Bo Luo, contributing to advancements in their respective fields.

Conclusion

Jun Ye's contributions to the development of SOI devices for plasma display technology exemplify his innovative spirit and dedication to advancing semiconductor technology. His work continues to influence the industry and pave the way for future innovations.